EC103E1 Teccor Electronics, Inc., EC103E1 Datasheet - Page 7

• Manufacturer Part Number: EC103E1
• Description: Thyristor, 500V 0.8A IGT
• Manufacturer: Teccor Electronics, Inc.

Electrical Specification Notes
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
Teccor Electronics, Inc.
[phone]
Peak Gate
Current
Amps
I
(16)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
GM
See Figures 5.1 through 5.9 for current ratings at specified operat-
ing case temperatures.
See Figure 5.10 for I
See Figure 5.11 for instantaneous on-state current (i
voltage (v
See Figure 5.12 for V
See Figure 5.13 for I
For more than one full cycle, see Figure 5.14.
0.8 - 4.0A devices also have a pulse peak forward current on-state
rating (repetitive) of 75A. This rating applies for operation at 60Hz,
75°C maximum tab (or anode) lead temperature, switching from
80V peak, sinusoidal current pulse width of 10 s minimum, 15 s
maximum. See Figures 5.20 and 5.21.
See Figure 5.15 for t
Test conditions as follows:
T
10A/ s. Rate-of-reversal of current
Repetition Rate = 60pps. V
V
C
R
= 15V minimum, V
80°C, rectangular current waveform; rate-of-rise of current
Reverse
V
Voltage
T
Peak
Gate
Volts
MIN
) - (typical).
GRM
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
Dissipation
Peak Gate
GT
H
gt
GT
DRM
Power
P
Watts
vs T
vs I
(16)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
GM
vs T
vs T
GT
= Rated. Rate-of-rise reapplied forward
C
RRM
C
.
.
C
.
.
= Rated.
Gate Power
Dissipation
P
Average
Watts
G(AV)
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
5A/ s. I
TM
60 Hz
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
Cycle Surge
= 1A (50 s pulse)
Peak One
Forward
Current
(6) (12)
I
Amps
TSM
T
) vs on-state
50 Hz
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
Critical Rate-
T
Of-Rise Of
Volts/ Sec
Off-State
C
Forward
Voltage
dv/dt
= 110°C
TYP
5-7
20
20
10
10
10
10
20
20
10
10
10
10
20
20
10
10
10
10
5
5
5
5
5
5
5
5
5
5
5
5
(10) Test condition is maximum rated RMS current except TO-92
(11) V
(12) See Figures 5.1 through 5.9 for maximum allowable case temper-
(13) I
(14) I
(15) I
(16) Pulse Width
(17) I
(18) Latching current can be higher than 20mA for higher I
(19) T
blocking voltage= 5V/ s. Gate Bias = 0V, 100
time interval).
devices are 1.2A
measuring gate trigger voltage and gate trigger current.
ature at maximum rated current.
2N6564 Series devices.
2N6564 Series devices.
Also latching current can be much higher at -40°C. See Figure
5.18.
Of On-State Current
GT
H
H
GT
C
D
Rate-Of-Change
= 10mA maximum for T
= 6mA maximum for T
= T
= 6VDC, R
= 500 A maximum for T
= 350 A maximum at T
Amps/ Sec
I
With 0.1 s
GT
Rise Time
Maximum
di/dt
J
= 50mA
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
for test conditions in off-state.
L
10 s.
= 100 . See Figure 5.19 for simple test circuit for
PK
Gate Pulse = 10mA
; T106/T107 devices are 4A
Min. Width = 15 s
Gate Controlled
With Rise Time
Turn-On Time
C
0.1 s
TYP
C
t
4.0
5.0
4.0
5.0
4.0
5.0
4.0
5.0
4.0
5.0
4.0
5.0
4.0
5.0
4.0
5.0
4.0
5.0
4.0
5.0
4.0
5.0
4.0
5.0
4.0
5.0
4.0
5.0
4.0
5.0
(8)
Sec
= -40°C for T106 devices.
gt
C
= -65°C for 2N5060 Series and
C
Sensitive SCRs
= -65°C for 2N5060 Series and
= -40°C for T106 devices.
Commutated
Turn-Off
Circuit
Time
MAX
(9)
t
Sec
50
45
50
45
50
45
50
45
50
45
50
45
50
45
50
45
50
45
50
45
50
45
50
45
50
45
50
45
50
45
q
PK
(during turn-off
.
Sensitive SCRs
(Non-Repetitive)
8.3 mSec For
RMS Surge
Current For
A Period Of
Amps
GT
On-State
Fusing
types.
l
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
2
2
t
Sec