IRF7507 International Rectifier, IRF7507 Datasheet - Page 2

• Manufacturer Part Number: IRF7507
• Description: Power MOSFET(Vdss=+-20V)
• Manufacturer: International Rectifier

IRF7507
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
Notes:
I
I
I
V
t
Q
V
R
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
GSS
rr
SM
d(on)
d(off)
S
DSS
r
f
SD
V
fs
rr
(BR)DSS
GS(th)
DS(ON)
g
gs
gd
iss
oss
rss
2
Repetitive rating; pulse width limited by
N-Channel I
P-Channel I
max. junction temperature. ( See fig. 21 )
(BR)DSS
/ T
J
Gate-to-Source Forward Leakage
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SD
SD
-1.2A, di/dt
1.7A, di/dt
Parameter
Parameter
66A/µs, V
100A/µs, V
DD
J
DD
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
N-Ch 20
P-Ch -20
N-Ch
P-Ch
N-Ch 0.7
P-Ch -0.7
N-Ch 2.6
P-Ch 1.3
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch ––
P-Ch
N-Ch ––
P-Ch
N-Ch ––
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
, T
N-P
, T
J
J
Min. Typ. Max. Units
Min. Typ. Max. Units
––
150°C
— 0.041 —
— -0.012 —
— 0.085 0.14
— 0.120 0.20
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
150°C
0.17 0.27
0.28 0.40
0.84 1.3
0.96 1.4
260
240
130
130
5.3
5.4
2.2
2.4
5.7
9.1
—
24
35
15
38
16
43
61
64
39
52
37
63
—
—
—
—
—
—
—
—
—
—
—
— -1.25
—
—
—
—
±100
1.25
-1.0
-1.2
1.0
-25
8.0
8.2
3.3
3.6
-14
1.2
59
78
56
95
—
—
—
—
—
—
25
—
—
—
—
—
—
—
—
—
—
—
—
—
—
19
Pulse width
V/°C
Surface mounted on FR-4 board, t
pF
nC
ns
nC
µA
ns
A
V
V
V
S
N-Channel
V
P-Channel
V
V
V
Reference to 25°C, I
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
V
V
T
T
N-Channel
V
R
P-Channel
V
R
N-Channel
T
P-Channel
T
N-Channel
I
P-Channel
I
D
D
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
DS
DS
DS
DS
GS
J
J
J
J
DD
DD
D
D
= -1.2A, V
= 1.7A, V
= 25°C, I
= 25°C, I
= 25°C, I
= 25°C, I
= 5.7
= 8.3
= 0V, V
= 0V, V
= 0V, I
= 0V, I
= -4.5V, I
= V
= V
= 10V, I
= -10V, I
= 16 V, V
= -16V, V
= 16 V, V
= -16V, V
= ± 12V
= 4.5V, I
= 2.7V, I
= -2.7V, I
= 10V, I
= -10V, I
GS
GS
300µs; duty cycle
, I
, I
D
D
DS
DS
F
F
D
D
DS
D
S
S
D
= 250µA
= -250µA
D
D
D
DS
D
GS
GS
= 1.7A, di/dt = 100A/µs
= -1.2A, di/dt = -100A/µs
D
D
GS
GS
= 250µA
= -250µA
= 0.85A
= 1.7A, V
= -1.2A, V
= 1.7A, R
= 15V, ƒ = 1.0MHz
= -15V, ƒ = 1.0MHz
Conditions
= 1.7A
= 0.85A
= -0.6A
= 16V, V
= -1.2A, R
=-1.2A
=-0.6A
= -16V, V
= 0V
= 0V, T
= 0V
= 0V, T
D
D
Conditions
= 1mA
= -1mA
GS
J
G
www.irf.com
GS
J
GS
= 125°C
GS
G
= 125°C
= 6.0
= 0V
= 4.5V
= 6.0 ,
= 0V
= -4.5V
2%.
10sec.