IRF750A Fairchild Semiconductor, IRF750A Datasheet
IRF750A
Available stocks
Related parts for IRF750A
IRF750A Summary of contents
Page 1
... Peak Diode Recovery dv/dt Total Power Dissipation (T = Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient IRF750A BV = 400 V DSS R = 0.3 DS(on TO-220 ...
Page 2
... IRF750A Electrical Characteristics (T Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...
Page 3
... Total Gate Charge [nC] G IRF750A @ ...
Page 4
... IRF750A Fig 7. Breakdown Voltage vs. Temperature Junction Temperature [ C] J Fig 9. Max. Safe Operating Area ...
Page 5
... V GS 10V Resistor L V out 90 0.5 rated 10 d(on ---- DSS IRF750A Charge t d(off off BV DSS 2 -------------------- DSS (t) DS Time ...
Page 6
... IRF750A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT I S Driver Driver ) I , Body Diode Forward Current DUT ) DUT ) + Same Type as DUT dv/dt controlled by “R ” controlled by Duty Factor “D” S Gate Pulse Width ...
Page 7
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...