IRF7601 International Rectifier, IRF7601 Datasheet
IRF7601
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IRF7601 Summary of contents
Page 1
... All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective only for product marked with Date Code 505 or later . 4. 4.5V GS Typ. ––– 9.1261D IRF7601 ® HEXFET Power MOSFET 20V DSS 0.035 ...
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... IRF7601 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
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... ° µ te-to-S o urce V oltage ( Fig 3. Typical Transfer Characteristics IRF7601 100 VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTT OM 1. µ LSE W IDTH 0°C J 0.1 0.1 1 ...
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... IRF7601 1200 iss 1000 800 600 400 200 rain-to-S ource Voltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ° 25° ...
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... SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient + V DS D.U. 0.001 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7601 D.U. 4.5V Pulse Width µs Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 10 ...
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... IRF7601 D.U Reverse Recovery Current Re-Applied Voltage Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - dv/dt controlled by R Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test Driver Gate Drive Period P ...
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... ( IRF7601 ...
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... IRF7601 Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches & TES : LLING DIME NSIO ILLIMET ER. 2. OUT LINE CON FO RMS T O EIA -481 & ...