IRF7831 International Rectifier, IRF7831 Datasheet - Page 5

• Manufacturer Part Number: IRF7831
• Description: HEXFETPower MOSFET
• Manufacturer: International Rectifier

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0.001
0.01
100
0.1
10
24
20
16
12
Fig 9. Maximum Drain Current Vs.
1
1E-006
8
4
0
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
Case Temperature
0.20
0.10
0.05
0.02
0.01
T J , Junction Temperature (°C)
50
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
75
0.0001
100
125
t 1 , Rectangular Pulse Duration (sec)
0.001
150
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
C
0.01
Fig 10. Threshold Voltage Vs. Temperature
R
1
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
R
1
-75
τ
2
τ
R
2
2
R
2
-50
0.1
R
τ
-25
3
3
R
τ
3
3
T J , Temperature ( °C )
0
τ
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
R
4
τ
4
R
4
4
1
25
R
τ
5
5
R
τ
5
5
50
τ
C
Ri (°C/W)
0.514
2.445
20.64
17.80
8.604
I D = 250µA
75
10
100
109
τi (sec)
0.000182
0.030949
0.36354
6.99
125
5
150
100