IRF7832 International Rectifier, IRF7832 Datasheet

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IRF7832

Manufacturer Part Number
IRF7832
Description
HEXFET Power MOSFET
Manufacturer
International Rectifier
Datasheet

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Applications
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Benefits
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www.irf.com
Notes  through
V
V
I
I
I
P
P
T
T
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J
STG
DS
GS
D
D
θJL
θJA
@ T
@ T
Synchronous MOSFET for Notebook
Processor Power
Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
and Current
Very Low R
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
20V V
@T
@T
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
GS
Max. Gate Rating
DS(on)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
are on page 10
at 4.5V V
Parameter
Parameter
GS
f
GS
GS
@ 10V
@ 10V
V
30V
DSS
G
S
S
S
1
2
3
4
Top View
4.0m @V
Typ.
–––
–––
R
DS(on)
-55 to + 155
HEXFET Power MOSFET
8
6
5
7
Max.
0.02
± 20
160
2.5
1.6
30
20
16
D
D
D
A
D
A
GS
max
Max.
= 10V 34nC
IRF7832
20
50
SO-8
Qg
Units
Units
W/°C
°C/W
°C
W
V
A
1/14/04
1

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IRF7832 Summary of contents

Page 1

... V R DSS 4.0m @V 30V Top View @ 10V GS @ 10V GS Typ. ––– f ––– IRF7832 HEXFET Power MOSFET max Qg DS(on) = 10V 34nC SO-8 Max. Units 30 V ± 160 2 ...

Page 2

... IRF7832 Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

... BOTTOM 2.25V 10 1 100 1000 0.1 Fig 2. Typical Output Characteristics 2 16A 4.5V 1.5 1.0 0.5 0.0 -60 -40 -20 3.5 4.0 Fig 4. Normalized On-Resistance IRF7832 VGS TOP 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.25V 2.25V 20µs PULSE WIDTH Tj = 150° 100 Drain-to-Source Voltage ( 100 120 140 160 T J, Junction Temperature (° ...

Page 4

... IRF7832 100000 0V MHZ C iss = SHORTED C rss = oss = 10000 1000 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 150° 25°C 1 0.1 0.0 0.2 0.4 0.6 0.8 1 Source-to-Drain Voltage (V) Fig 7 ...

Page 5

... THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 2.5 2 250µA 1.5 1.0 0.5 -60 -40 -20 125 150 Fig 10. Threshold Voltage Vs. Temperature 0.001 0.01 0 Rectangular Pulse Duration (sec) IRF7832 100 120 140 160 Temperature (° 100 5 ...

Page 6

... IRF7832 125° 25° Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 15V DRIVER D.U 20V VGS 0.01 Ω Fig 14. Unclamped Inductive Test Circuit and Waveform V DS D.U Pulse Width < 1µs Duty Factor < ...

Page 7

... Current D.U.T. V Waveform DS V Re-Applied G + Voltage - Inductor Curent for Logic Level Devices ® HEXFET Power MOSFETs Qgd Qgodr Fig 19. Gate Charge Waveform IRF7832 P.W. Period D = Period V =10V GS Body Diode Forward Current di/dt Diode Recovery dv/ Body Diode Forward Drop I Ripple ≤ for N-Channel ...

Page 8

... IRF7832 Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET loss conduction switching drive This can be expanded and approximated by × loss rms ds(on ) ⎛ ⎛ ⎞ Q ⎜ ⎟ × ⎜ × × V × ⎝ ⎠ ⎝ × V × ...

Page 9

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Page 10

... IRF7832 SO-8 Tape and Reel NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° 2.0mH, R ...

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