IRF9530-220M Seme LAB, IRF9530-220M Datasheet - Page 2

• Manufacturer Part Number: IRF9530-220M
• Description: P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
• Manufacturer: Seme LAB

ELECTRICAL CHARACTERISTICS
Semelab plc.
BV
D
R
V
g
I
I
I
C
C
C
Q
Q
Q
t
t
t
t
I
I
V
t
Q
L
L
DSS
GSS
GSS
d(on)
r
d(off)
f
S
SM
rr
fs
D
S
BV
GS(th)
SD
DS(on)
iss
oss
rss
D
g
gs
gd
rr
DSS
T
DSS
J
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
PACKAGE CHARACTERISTICS
Internal Drain Inductance
Internal Source Inductance
Parameter
Telephone [phone]. Fax [phone].
E-mail:
[e-mail]
(from 6mm down source lead to centre of source bond pad)
(from 6mm down drain lead pad to centre of die)
V
Reference to 25°C
I
V
V
V
V
V
V
V
V
V
f = 1MHz
V
V
I
V
V
I
R
I
V
I
d
Website:
D
D
D
S
S
i
GS
GS
GS
DS
DS
GS
GS
GS
GS
DS
GS
DS
DS
DD
GS
G
/ d
= -9.3A
= -9.3A
= 1mA
= -9.3A
= -9.3A
Test Conditions
(T
= 7.5
= V
³
= 25V
= 0.5BV
= 0.5BV
= 0
= 10V
= 10V
= 0
= 20V
= –20V
= 0
= 10V
= -50V
= 0
t
C
£
15V
= 25°C unless otherwise stated)
100A/
GS
http://www.semelab.co.uk
W
DSS
DSS
m
s V
I
I
I
I
I
V
T
I
T
T
D
D
D
D
DS
D
J
J
J
DS
DD
= 1mA
= -5.8A
= -9.3A
= 250
= -9.3A
= 125°C
= 25°C
= 25°C
= -5.8A
= 0.8BV
£
50V
m
A
DSS
-100
14.7
Min.
2.5
-2
1
2
IRF9530-220M
Typ.
-0.1
800
350
125
8.7
8.7
Max.
-250
-100
0.31
0.36
100
140
140
140
-9.3
-4.7
250
-25
7.1
-37
30
21
60
-4
3
Prelim. 7/00
V / °C
Unit
S(
m
nA
nC
nC
m
nH
pF
ns
ns
W
V
V
A
V
(
C
A
W
W
)