SI2305CDS Vishay Siliconix, SI2305CDS Datasheet
![no-image](/images/no-image-200.jpg)
SI2305CDS
Available stocks
Related parts for SI2305CDS
SI2305CDS Summary of contents
Page 1
... GS TO-236 (SOT-23 Top View Si2305CDS (N5)* * Marking Code Ordering Information: Si2305CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source-Drain Diode Current Maximum Power Dissipation ...
Page 2
... Si2305CDS Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance ...
Page 3
... GS 1.5 2.0 2 Drain Current ( 6 Total Gate Charge (nC) Gate Charge Si2305CDS Vishay Siliconix 125 ° ° ° 0.0 0.3 0.6 0.9 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 1800 1500 C iss ...
Page 4
... Si2305CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.0 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 250 µA D 0.6 0.5 0.4 0.3 0.2 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.6 0.9 1 100 125 150 100 Limited by R ...
Page 5
... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 64847 S10-0720-Rev. C, 29-Mar-10 75 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si2305CDS Vishay Siliconix 2.0 1.6 1.2 0.8 0.4 0 ...
Page 6
... Si2305CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...
Page 7
... MILLIMETERS Min Max 0.89 1.12 0.01 0.10 0.88 1.02 0.35 0.50 0.085 0.18 2.80 3.04 2.10 2.64 1.20 1.40 0.95 BSC 1.90 BSC 0.40 0.60 0.64 Ref 0.50 Ref 3° 8° Package Information Vishay Siliconix C 0. Gauge Plane Seating Plane INCHES Min Max 0.035 0.044 0.0004 0.004 0.0346 0.040 0.014 0.020 0.003 0.007 0.110 0.120 0.083 0.104 0.047 0.055 0.0374 Ref ...
Page 8
... See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286), for the basis of the pad design for a LITTLE FOOT SOT-23 power MOSFET footprint ...
Page 9
... RECOMMENDED MINIMUM PADS FOR SOT-23 Return to Index Return to Index Document Number: 72609 Revision: 21-Jan-08 0.037 0.022 (0.950) (0.559) 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Application Note 826 Vishay Siliconix www.vishay.com 25 Datasheet pdf - http://www.DataSheet4U.net/ ...
Page 10
... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...