SI2306DS Vishay Siliconix, SI2306DS Datasheet - Page 2

• Manufacturer Part Number: SI2306DS
• Description: N-Channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Notes
a.
b.
www.vishay.com
2
Si2306DS
Vishay Siliconix
SPECIFICATIONS (T
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On State Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Guaranteed by design, not subject to production testing.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
b
Parameter
a
a
a
a
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
Symbol
V
V
r
r
(BR)DSS
I
I
DS(on)
t
t
I
I
I
C
GS(th)
D(
D(on)
V
C
C
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
Q
g
R
oss
t
SD
rss
t
iss
fs
gs
gd
r
gt
f
g
g
)
V
V
V
I
V
DS
DS
D
DS
DS
DS
DS
^ 1 A, V
V
= 15 V, V
V
V
= 30 V, V
= 15 V, V
V
V
= 15 V, V
V
DS
V
V
V
V
DS
V
I
DS
S
DS
Test Condition
GS
DS
DS
DD
DD
DS
GS
= 1.25 A, V
w 4.5 V, V
w 4.5 V, V
= 0 V, V
= V
= 4.5 V, I
= 4.5 V, I
= 0 V, I
= 30 V, V
,
= 15 V, R
= 15 V, R
= 10 V, I
,
GEN
GS
GS
GS
GS
GS
GS
GS
, I
= 10 V, R
GS
= 0 V, T
= 10 V, I
D
= 5 V, I
= 0 V, f= 1 MHz
D
D
D
D
= 250 mA
GS
GS
GS
= 250 mA
GS
L
L
= "20 V
= 3.5 A
= 2.8 A
= 3.5 A
= 15 W
= 15 W
= 4.5 V
= 0 V
= 0 V
= 10 V
,
,
D
J
D
D
G
= 55_C
= 3.5 A
= 3.5 A
= 6 W
Min
0.5
30
1
6
4
0.046
0.070
Typ
1.35
555
120
6.9
0.8
4.2
8.5
1.9
7.5
5.2
60
17
9
S-31873—Rev. C, 15-Sep-03
Document Number: 70827
"100
Max
0.057
0.094
0.5
1.2
2.4
10
20
20
18
35
12
7
Unit
nA
mA
mA
nC
nC
pF
p
ns
ns
W
W
W
V
V
A
A
S
V