SI2309DS Vishay Siliconix, SI2309DS Datasheet
SI2309DS
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SI2309DS Summary of contents
Page 1
... Maximum Junction-to-Lead Notes a. Surface Mounted on FR4 Board sec. b. Document Number: 70835 S-21339—Rev. B, 05-Aug- TO-236 (SOT-23 Top View Si2309DS (A9)* *Marking Code = 25_C UNLESS OTHERWISE NOTED) A Symbol 25_C 100_C 0 ...
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... Si2309DS Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... S-21339—Rev. B, 05-Aug-02 500 400 300 200 100 6 8 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 1.0 0.8 0.6 0 25_C J 0.2 0.0 0.8 1.0 1.2 Si2309DS Vishay Siliconix Capacitance C iss C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1. -50 - 100 T - Junction Temperature (_C) J On-Resistance vs ...
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... Si2309DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 = 250 0.4 0.2 0.0 -0.2 -0.4 -50 - Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 2 100 125 150 0.01 Safe Operating Area, Junction-to-Ambient ...