SI2312DS Vishay Siliconix, SI2312DS Datasheet
SI2312DS
Available stocks
Related parts for SI2312DS
SI2312DS Summary of contents
Page 1
... 25_C 70_C stg Symbol sec R R thJA Steady State Steady State R thJF Si2312DS Vishay Siliconix Ordering Information: Si2312DS-T1 5 sec Steady State Unit "8 4.9 3.77 3.9 3 11.25 mJ 1.0 A 1.25 0. 0.80 0.48 -55 to 150 _C Typical Maximum ...
Page 2
... Si2312DS Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) A Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage b Dynamic Total Gate Charge ...
Page 3
... T 0.1 0.01 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Document Number: 71338 S-31990—Rev. D, 13-Oct 25_C J 0.8 1.0 1.2 Si2312DS Vishay Siliconix Capacitance 1500 1200 C iss 900 600 300 C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...
Page 4
... Si2312DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.2 0 250 mA D -0.0 -0.1 -0.2 -0.3 -0.4 -50 - Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 100 125 150 0. Square Wave Pulse Duration (sec) ...