SI2333CDS Vishay Siliconix, SI2333CDS Datasheet
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SI2333CDS
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SI2333CDS Summary of contents
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... I ( 5.1 APPLICATIONS • Load Switch - 4 • PA Switch - 3.9 TO-236 (SOT-23 Top View Si2333CDS (O3)* * Marking Code Ordering Information: Si2333CDS-T1-E3 (Lead (Pb)-free °C, unless otherwise noted ° ° ° ° ° ° °C ...
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... Si2333CDS Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance ...
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... 1 1.0 1 Si2333CDS Vishay Siliconix 2.0 1 °C C 1.0 0 125 ° °C C 0.0 0.0 0.3 0.6 0.9 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 2400 1800 C iss 1200 600 C oss ...
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... Si2333CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0.001 0.0 0.2 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.3 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com ° ° ...
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... Document Number: 68717 S-81445-Rev. A, 23-Jun- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si2333CDS Vishay Siliconix 1 100 10 Notes Duty Cycle ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies ...