SI2341DS Vishay Siliconix, SI2341DS Datasheet

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SI2341DS

Manufacturer Part Number
SI2341DS
Description
P-Channel 30-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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SI2341DS
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SI2341DS-T1-E3
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Notes
a.
b.
c.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72263
S-31675—Rev. B, 11-Aug-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board, t v 5 sec.
Surface Mounted on FR4 Board.
V
DS
- 30
30
(V)
b
b
a
J
J
= 150_C)
= 150_C)
b
c
0.120 @ V
0.072 @ V
r
Parameter
Parameter
DS(on)
b
b
GS
GS
P-Channel 30-V (D-S) MOSFET
= - 4.5 V
(W)
= - 10 V
b
G
S
A
1
2
= 25_C UNLESS OTHERWISE NOTED)
*Marking Code
I
Si2341DS (F1)*
New Product
D
(SOT-23)
- 2.8
- 2.0
Top View
TO-236
(A)
T
T
T
T
A
A
A
A
b
= 25_C
= 70_C
= 25_C
= 70_C
3
D
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
thJA
thJF
DM
I
I
I
GS
DS
D
D
S
D
D
FEATURES
D TrenchFETr Power MOSFETS
APPLICATIONS
D Load Switch
D PA Switch
stg
Ordering Information: Si2341DS-T1
Typical
5 sec
- 0.75
0.57
140
115
- 2.8
- 2.2
0.9
60
- 55 to 150
Vishay Siliconix
"20
- 30
- 12
Steady State
Maximum
Si2341DS
140
175
0.71
0.45
- 2.5
- 2.0
- 0.6
75
www.vishay.com
Unit
_C/W
Unit
_C
W
W
V
V
A
A
1

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SI2341DS Summary of contents

Page 1

... UNLESS OTHERWISE NOTED) A Symbol T = 25_C 70_C 25_C 70_C A T Symbol Si2341DS Vishay Siliconix FEATURES D TrenchFETr Power MOSFETS APPLICATIONS D Load Switch D PA Switch Ordering Information: Si2341DS-T1 5 sec Steady State " 2 2 0.75 - 0.6 S 0.9 0. ...

Page 2

... Si2341DS Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On Resistance Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage ...

Page 3

... Q - Total Gate Charge (nC) g Document Number: 72263 S-31675—Rev. B, 11-Aug-03 New Product Si2341DS Vishay Siliconix Transfer Characteristics 55_C C 10 25_C 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Capacitance 700 ...

Page 4

... Si2341DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C J 1 0.1 0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.6 0.4 0.2 = 250 0.0 - 0 Temperature (_C) J www.vishay.com 4 New Product T = 25_C J 0.8 1.0 1.2 75 100 125 150 Safe Operating Area, Junction-to-Case 100 ...

Page 5

... Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 72263 S-31675—Rev. B, 11-Aug-03 New Product - Square Wave Pulse Duration (sec) Si2341DS Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 62.5_C/W thJA ( ...

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