HER105-TB WonTop Electronics Co., Ltd, HER105-TB Datasheet - Page 2
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HER105-TB
Manufacturer Part Number
HER105-TB
Description
1.0a Ultrafast Diode
Manufacturer
WonTop Electronics Co., Ltd
Datasheet
1.HER105-TB.pdf
(4 pages)
HER101 – HER108
1.00
0.75
0.50
0.25
30
20
10
0
(+)
(-)
0
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF.
2. Rise Time = 10ns max. Input Impedance = 50 .
1
0
50V DC
Approx
25
Fig. 1 Forward Current Derating Curve
Fig. 3 Peak Forward Surge Current
50 NI (Non-inductive)
T , AMBIENT TEMPERATURE ( C)
NUMBER OF CYCLES AT 60Hz
A
50
75
1.0
Device
Under
NI
Test
10
100
8.3 ms single half-sine-wave
Resistive or Inductive load
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
Oscilloscope
Single phase half wave
(Note 1)
(JEDEC method)
125
Pulse width
10 NI
150
Generator
(Note 2)
Pulse
175
100
(-)
(+)
2 of 4
100
0.01
-0.25A
10
+0.5A
1.0
0.1
-1.0A
10
1
0A
1
0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Pulse width = 300 s
F
0.2
Fig. 4 Typical Junction Capacitance
T = 25 C
Fig. 2 Typical Forward Characteristics
j
HER106- HER108
V , REVERSE VOLTAGE (V)
Set time base for 5/10ns/cm
R
0.4
t
rr
HER101 - HER105
HER101 - HER104
0.6
© 2006 Won-Top Electronics
10
0.8
HER106- HER108
1.0
f = 1.0MHz
T = 25 C
j
1.2
HER105
100
1.4