2SK1070 Hitachi Semiconductor, 2SK1070 Datasheet - Page 2

• Manufacturer Part Number: 2SK1070
• Description: Silicon N-Channel Junction FET
• Manufacturer: Hitachi Semiconductor

2SK1070
Absolute Maximum Ratings (Ta = 25°C)
Item
Gate to drain voltage
Gate to source voltage
Drain current
Gate current
Channel power dissipation
Channel temperature
Storage temperature
Electrical Characteristics (Ta = 25°C)
Item
Gate cutoff current
Gate to source breakdown
voltage
Drain current
Gate to source cutoff voltage
Forward transfer admittance
Input capacitance
Note:
Grade
Mark
I
See characteristic curves of 2SK435.
2
DSS
1. The 2SK1070 is grouped by I
B
PIB
6 to 14
C
PIC
12 to 22
Symbol
I
V
I
V
Ciss
GSS
DSS
y
(BR)GSS
GS(off)
fs
*
1
DSS
D
PID
18 to 30
Min
—
–22
6
0
20
—
as follows.
Symbol
V
V
I
I
Pch
Tch
Tstg
Typ
—
—
—
—
30
9
D
G
GDO
GSO
E
PIE
27 to 40
Max
–10
—
40
–2.5
—
—
Unit
nA
V
mA
V
mS
pF
Ratings
–22
–22
50
10
150
150
–55 to +150
Test conditions
V
I
V
V
V
V
G
GS
DS
DS
DS
DS
= –10 A, V
= 5 V, V
= –15 V, V
= 5 V, I
= 5 V, V
= 5 V, V
D
GS
GS
GS
Unit
V
V
mA
mA
mW
= 10 A
C
C
= 0, Pulse test
DS
DS
= 0, f = 1 kHz
= 0, f = 1 MHz
= 0
= 0