2SK1155 Hitachi Semiconductor, 2SK1155 Datasheet - Page 5

• Manufacturer Part Number: 2SK1155
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

10
8
6
4
2
0
Drain to Source Saturation Voltage
5
4
3
2
1
0
–40
Gate to Source Voltage V
vs. Gate to Source Voltage
4
V
Pulse Test
GS
Static Drain to Source on State
Resistance vs. Temperature
Case Temperature T
= 10 V
0
8
40
I
D
12
I
5 A
2 A
D
= 1 A
= 5 A
Pulse Test
80
GS
16
C
(V)
1 A
(°C)
120
2 A
20
160
1.0
0.5
0.2
0.1
10
1.0
0.5
0.2
0.1
10
5
2
0.05
5
2
0.5
V
Pulse Test
DS
0.1
Pulse Test
Forward Transfer Admittance
1.0
Static Drain to Source on State
= 20 V
Resistance vs. Drain Current
Drain Current I
0.2
Drain Current I
vs. Drain Current
2
2SK1155, 2SK1156
V
0.5
GS
5
= 10 V
T
C
1.0
D
= 25°C
10
75°C
D
(A)
–25°C
(A)
2
20
15 V
5
50
5