2SK1315 Hitachi Semiconductor, 2SK1315 Datasheet
2SK1315
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2SK1315 Summary of contents
Page 1
... Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline LDPAK Gate 2. Drain 3. Source ...
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... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value Symbol ...
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... Gate to source breakdown voltage Gate to source leak current Zero gate voltage 2SK1315 I drain current 2SK1316 Gate to source cutoff voltage Static Drain to source 2SK1315 R on state resistance 2SK1316 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time ...
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... Power vs. Temperature Derating 100 Case Temperature T (°C) C 150 ...
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Hitachi Code LDPAK (L) JEDEC — EIAJ — Weight (reference value) 1.4 g Unit: mm ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...