2SK1646 Sanyo Semicon Device, 2SK1646 Datasheet
2SK1646
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2SK1646 Summary of contents
Page 1
... SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SK1646 Package Dimensions unit : mm 2134A 0.4 Symbol Conditions Tstg N-Channel GaAs MESFET 2SK1646 [2SK1646] 1.9 0.95 0. 0.6 0.95 0. Gate 2 Source 3 : Drain 4 : Source SANYO : CP4 Ratings 6 ...
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... Electrical Characteristics at Ta=25 C Parameter Gate-to-Source Breakdown Voltage Saturated Drain Current Cutoff Voltage Forward Transfer Admittance Minimum Noise Figure Associated Gain Maximum Available Gain * : The 2SK1646 is classified by I DSS as follows. I DSS RANK RANGE (mA 05H S-Parameter S11 V DS =3V =10mA, 20mA ...
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... S21 ANG MAG ANG - -59.3 2.713 125.9 - -87.1 2.518 101.0 --114.8 2.300 77.2 --141.1 2.077 55.1 --164.9 1.872 35.0 173.8 1.700 16.3 154.3 1 ...
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... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2004. Specifications and information herein are subject to change without notice. 2SK1646 PS No.7546-4/4 ...