2SK1948 Hitachi Semiconductor, 2SK1948 Datasheet - Page 4

• Manufacturer Part Number: 2SK1948
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SK1948
4
300
200
100
100
0
80
60
40
20
0
Power vs. Temperature Derating
Drain to Source Voltage V
10 V
Case Temperature Tc (°C)
Typical Output Characteristics
4
50
8 V
8
V
12
100
GS
Pulse Test
6 V
5.5 V
5 V
4 V
= 3.5 V
16
DS
(V)
150
20
1000
300
100
0.3
0.1
50
40
30
20
10
30
10
0
3
1
1
Gate to Source Voltage V
Typical Transfer Characteristics
Drain to Source Voltage V
Maximum Safe Operation Area
Ta = 25°C
Pulse Test
V
Tc = 25°C
DS
3
–25°C
2
= 10 V
10
4
30
75°C
6
100
GS
8
DS
300 1000
(V)
(V)
10