2SK217 Hitachi Semiconductor, 2SK217 Datasheet - Page 5

• Manufacturer Part Number: 2SK217
• Description: Silicon N-Channel Junction FET
• Manufacturer: Hitachi Semiconductor

Impedance
SG Output
200
100
50
20
10
5
2
0.1
50
Drain to Source Voltage V
S.G.
0.2
Power Gain and Noise Figure
5.4
C
Drain to Source Voltage
Output Capacitance vs.
1
Shield
0.5
L
Test Circuit
1
1.0
D.U.T.
C
2
V
DD
L
2
2
8
6
4
2
0
3.0
V
f = 1 MHz
4.700
GS
DS
= 0
Drain to Source Voltage V
50
5
(V)
Unit R :
Drain to Source Voltage
4
V.V
C : pF
10
Noise Figure vs.
8
C
V
f = 100 MHz
1
, C
GS
L
L
2
1
2
= 0
:
:
:
30
20
10
0 to 30pF Variable Air
3.5 T 1 mm Copper Ribbon, Tin plated 10 mm Inside dia.
4.5 T 1 mm Copper Ribbon, Tin plated 10 mm Inside dia.
0
12
DS
(V)
Drain to Source Voltage V
16
Drain to Source Voltage
Power Gain vs.
5
V
f = 100 MHz
GS
= 0
10
DS
(V)
2SK217
15
5