2SK2257-01 Fuji Electric, 2SK2257-01 Datasheet

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2SK2257-01

Manufacturer Part Number
2SK2257-01
Description
N-channel MOS-FET
Manufacturer
Fuji Electric
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK2257-01
Manufacturer:
FUJITSU
Quantity:
12 500
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- V
- Avalanche Proof
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
- Absolute Maximum Ratings (T
Item
Drain-Source-Voltage
Drain-Gate-Voltage (R
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
- Electrical Characteristics (T
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
Turn-Off-Time t
Avalanche Capability
Continous Reverse Drain Current
Pulsed Reverse Drain Current
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
Item
Thermal Resistance
> Features
> Applications
> Maximum Ratings and Characteristics
Thermal Characteristics
GS
= ± 30V Guarantee
on
off
(t
(t
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
on
on
=t
=t
GS
d(off)
d(on)
=20K )
+t
+t
f
r
)
)
C
=25°C),
C
FAP-IIA Series
=25°C),
2SK2257-01
unless otherwise specified
unless otherwise specified
Q
R
C
C
C
R
R
V
V
V
P
V
V
V
T
T
Symbol
Symbol
g
Symbol
I
I
I
I
t
t
t
t
I
I
I
t
DS
DGR
D
D(puls)
GS
D
ch
stg
(BR)DSS
GS(th)
DSS
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
DR
DRM
SD
rr
rr
th(ch-a)
th(ch-c)
I
I
V
V
V
I
I
L = 100µH
channel to air
channel to case
D
D
D
D
DS
GS
GS
=1mA
=1mA
=9A
=9A
I
F
-55 ~ +150
-dI
=2xI
=500V
=0V
=±30V
Rating
F
/dt=100A/µs T
Test conditions
Test conditions
DR
I
F
=I
500
500
±30
150
150
V
R
V
V
V
17
68
DR
V
f=1MHz
CC
I
GS
GS
DS
GS
D
GS
=17A
=300V
=10
=0V T
V
V
T
T
V
V
V
=25V
=10V
T
=0V
V
ch
ch
ch
GS
DS=
DS
GS
DS
GS
=25°C
=125°C
=25°C
=0V
=0V
=10V
=25V
V
=0V
GS
ch
Unit
ch
°C
°C
W
V
V
A
A
V
=25°C
=25°C
> Outline Drawing
> Equivalent Circuit
500V
N-channel MOS-FET
Min.
Min.
500
2,5
17
8
Typ.
Typ.
3000
300
120
300
3,0
0,2
0,3
1,5
3,5
10
10
16
70
25
70
75
Max.
Max.
17A
4500
0,83
35
500
100
450
110
110
180
120
3,5
1,0
0,4
2,3
40
17
68
150W
°C/W
°C/W
Unit
Unit
mA
µC
µA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
A
A
V

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2SK2257-01 Summary of contents

Page 1

... Continous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com 2SK2257-01 FAP-IIA Series =25°C), unless otherwise specified Symbol Rating V 500 DS V ...

Page 2

... DS Typical Drain-Source-On-State-Resistance vs [A] D Typical Capacitance vs [V] DS Allowable Power Dissipation vs [°C] c 2SK2257-01 FAP-IIA Series Drain-Source-On-State Resistance vs [°C] ch Typical Forward Transconductance vs [A] D Typical Input Charge 8 Q [nC] g Safe operation area 12 ...

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