2SK2374 Panasonic Semiconductor, 2SK2374 Datasheet
2SK2374
Manufacturer Part Number
2SK2374
Description
Silicon N-Channel Power F-MOS FET
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SK2374.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK2374
Manufacturer:
PANASONIC
Quantity:
12 500
Power F-MOS FETs
2SK2374
Silicon N-Channel Power F-MOS FET
*
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
Avalanche energy capacity guaranteed
High-speed switching
Low ON-resistance
No secondary breakdown
Contactless relay
Diving circuit for a solenoid
Driving circuit for a motor
Control equipment
Switching power supply
L = 3.6mH, I
Features
Applications
Absolute Maximum Ratings
Electrical Characteristics
Parameter
Parameter
L
= 5A, 1 pulse
DC
Pulse
T
Ta = 25°C
C
= 25°C
Symbol
V
V
I
I
EAS
P
T
T
Symbol
I
I
V
V
R
| Y
V
C
C
C
t
t
t
t
R
R
d(on)
r
f
d(off)
D
DP
DSS
GSS
D
ch
stg
DS(on)
iss
oss
rss
th(ch-c)
th(ch-a)
DSS
GSS
DSS
th
DSF
fs
(T
|
*
C
(T
= 25°C)
C
= 25°C)
V
V
I
V
V
V
I
V
V
V
D
DR
DS
GS
DS
GS
DS
DS
DD
GS
55 to +150
Ratings
= 1mA, V
= 5A, V
= 720V, V
= ±30V, V
= 25V, I
= 10V, I
= 25V, I
= 20V, V
= 10V, R
= 200V, I
900
±30
±10
100
150
±5
45
3
GS
Conditions
GS
D
D
D
GS
L
D
= 1mA
= 3A
= 3A
= 0
GS
DS
= 0
= 66.6
= 3A
= 0, f = 1MHz
= 0
= 0
Unit
mJ
°C
°C
W
V
V
A
A
5.45±0.3
1.1±0.1
min
900
2.0±0.2
1.5
2
4.0
5˚
1
15.5±0.5
2
1400
140
170
typ
3.5
3
60
30
60
60
2
5.45±0.3
3.2±0.1
41.67
max
1.25
100
2.8
±1
5˚
1.6
5
TOP-3E Package
5˚
0.7±0.1
1: Gate
2: Drain
3: Source
3.0±0.3
5˚
unit: mm
5˚
5˚
°C/W
°C/W
Unit
pF
pF
pF
ns
ns
ns
ns
V
V
V
S
A
A
1
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2SK2374 Summary of contents
Page 1
... Power F-MOS FETs 2SK2374 Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching Low ON-resistance No secondary breakdown Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor Control equipment Switching power supply Absolute Maximum Ratings Parameter Symbol ...
Page 2
... Gate to source voltage iss oss rss 10000 =25V DS =25˚C C 1000 100 120 Drain to source voltage V 2SK2374 T =25˚C C 45mJ =25˚ =10A f=1MHz T =25˚ iss ...
Page 3
... Gate charge amount 100 Notes: R was measured at Ta=25˚C th and under natural convection. (1) without heat sink 10 (2) with a 100 100 2mm Al heat sink 0 0.01 –4 –3 – 2SK2374 R t th(t) – Time (1) ( ...