2SK2618ALS Sanyo Semicon Device, 2SK2618ALS Datasheet - Page 2

• Manufacturer Part Number: 2SK2618ALS
• Description: N-Channel Silicon MOSFET General-Purpose Switching Device
• Manufacturer: Sanyo Semicon Device

Electrical Characteristics at Ta=25°C
Package Dimensions
unit : mm (typ)
7509-002
Avalanche Resistance Test Circuit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
15V
0V
2.55
1 2 3
10.0
Parameter
0.9
0.75
1.2
2.55
3.2
50Ω
≥50Ω
RG
4.5
0.7
1.2
V (BR)DSS
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
2.8
V GS (off)
R DS (on)
2SK2618ALS
Symbol
t d (on)
t d (off)
 yfs 
I DSS
I GSS
Coss
Ciss
Crss
V SD
Qg
t r
t f
L
I D =1mA, V GS =0V
V DS =500V, V GS =0V
V GS =±30V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =3A
I D =3A, V GS =15V
V DS =20V, f=1MHz
V DS =20V, f=1MHz
V DS =20V, f=1MHz
V DS =200V, V GS =10V, I D =5A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
I S =5A, V GS =0V
2SK2618ALS
V DD
Conditions
Switching Time Test Circuit
PW=1µs
D.C.≤0.5%
P.G
V GS =15V
min
R GS =50Ω
500
G
3.5
1.5
Ratings
V DD =200V
typ
D
0.95
700
250
120
3.0
20
20
20
50
25
S
I D =3A
R L =66.7Ω
2SK2618ALS
max
±100
V OUT
1.25
1.0
5.5
1.2
No. A0360-2/4
Unit
mA
nA
nC
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S
V