2SK2685 Hitachi Semiconductor, 2SK2685 Datasheet - Page 6

• Manufacturer Part Number: 2SK2685
• Description: GaAs HEMT
• Manufacturer: Hitachi Semiconductor

2SK2685
6
–0.2
180
0.2
0
–150
150
–0.4
0.4
Condition : I
200 to 2000 MHz (200 MHz step)
S11 Parameter vs. Frequency
0.2
–0.6
Condition : I
200 to 2000 MHz (200 MHz step)
–120
0.6
S21 Parameter vs. Frequency
120
0.4 0.6 0.8
–0.8
0.8
D
= 10 mA, Zo = 50
D
–1
1
(V
(V
–90
= 10 mA, Zo = 50
1.0
90
DS
DS
(V
(V
1.5
DS
DS
= 1 V)
= 3 V)
–1.5
1.5
2
= 1 V)
= 3 V)
3 4 5
–60
60
–2
2
Scale : 2/div.
–3
3
10
–4
4
–5
5
–30
10
–10
30
0
180
–0.2
0.2
0
–150
150
–0.4
0.4
Condition : I
200 to 2000 MHz (200 MHz step)
Condition : I
200 to 2000 MHz (200 MHz step)
S22 Parameter vs. Frequency
0.2
–120
–0.6
S12 Parameter vs. Frequency
120
0.6
0.4 0.6 0.8
–0.8
0.8
D
D
= 10 mA, Zo = 50
–1
–90
= 10 mA, Zo = 50
1
90
(V
(V
1.0
(V
(V
DS
DS
DS
DS
1.5
= 1 V)
= 3 V)
= 1 V)
= 3 V)
–1.5
1.5
2
Scale : 0.02/div.
–60
3 4 5
60
–2
2
–3
3
10
–4
4
–30
–5
30
5
10
–10
0