2SK2974 Mitsubishi Electric Semiconductor, 2SK2974 Datasheet - Page 2

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2SK2974

Manufacturer Part Number
2SK2974
Description
RF POWER MOS FET(VHF/UHF power amplifiers)
Manufacturer
Mitsubishi Electric Semiconductor
Datasheet
TYPICAL PERFORMANCE DATA
EQUIVALENT CIRCUIT
C1
GR40-102
1000pF
Note: Board material-glass epoxi substrate
INPUT
micri strip line width=2.8mm, r :4.8,t=1.6mm
50
48
46
44
42
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
41.5mm
C2
GR40-10
10pF
1
8
6
4
2
0
8
7
6
5
4
3
2
0
0
0
T
C
1
=25˚C
5
V
INPUT POWER Pin (dBm)
GG
2
R1
CR10-562
5600
10
3mm
P
C3
10µF,
100pF,10pF
in parallel
3
O
, add VS. Pin
15
I
DS
4
P
O
V
VS. V
C4
GR40-090
9pF
20
5
DS
6mm
(V)
6
25
DS
7
30
V
GS
8
R2
CR10-510
51
C5
GR40-102
1000pF
=2.0V
35
add
2mm
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
9
10
40
30
80
70
60
50
40
20
10
0
5mm
C6
GR40-050
5pF
5mm
50
48
46
44
42
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
C7
GR40-270
27pF
4
2
1
8
6
0
8
7
6
5
4
3
2
0
0
2
V
T
DRAIN SUPPLY VOLTAGE
C
DS
0.5
=25˚C
3
=9.6V
MITSUBISHI RF POWER MOS FET
1
V
DD
4
1.5
P
L1
4Turns AWG#26, 1.1
Enameled wire(mm)
O
, add VS. V
C8
10µF,
1000pF,10pF
in parallel
I
5
DS
2
C9
GR40-010
1pF
VS. V
V
P
2.5
add
GS
6
O
(V)
3
GS
7
3.5
DD
47mm
8
C10
GR40-102
1000pF
2SK2974
4
V
DD
9
4.5
(V)
OUTPUT
10
5
68
70
66
64
62
60
58
56
54
52
50
48
46
44
42
40
38
36
34
32
30
28
26
24
22
20
Nov. ´97
C11
GR40-10
10pF

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