2SK3134 Hitachi Semiconductor, 2SK3134 Datasheet - Page 4

• Manufacturer Part Number: 2SK3134
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

2SK3134(L),2SK3134(S)
Main Characteristics
4
160
120
100
80
40
80
60
40
20
0
0
Drain to Source Voltage
Power vs. Temperature Derating
Typical Output Characteristics
4 V
Case Temperature
5 V
V
2
50
GS
= 10 V
4
100
6
2.5 V
Pulse Test
3 V
Tc (°C)
150
V
DS
8
(V)
200
10
1000
100
300
100
0.3
0.1
80
60
40
20
30
10
0
3
1
0.1
Operation in
this area is
limited by R
Ta = 25°C
Drain to Source Voltage
Gate to Source Voltage
V
Pulse Test
Typical Transfer Characteristics
DS
Maximum Safe Operation Area
0.3
1
= 10 V
75°C
1
DS(on)
2
3
3
Tc = –25°C
10
25°C
V
V
GS
DS
4
30
(V)
(V)
100
5