2SK3192 Panasonic Semiconductor, 2SK3192 Datasheet
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2SK3192
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2SK3192 Summary of contents
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... Power MOSFETs 2SK3192 Silicon N-channel power MOSFET ■ Features • Avalanche energy capability guaranteed • High-speed switching • Low ON resistance R on • No secondary breakdown ■ Applications • PDP • Switching mode regulator ■ Absolute Maximum Ratings T Parameter Drain-source surrender voltage Gate-source surrender voltage ...
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... Electrical Characteristics (continued) T Parameter Diode forward voltage Reverse recovery time Reverse recovery charge Gate charge load Gate-source charge Gate-drain charge Thermal resistance (ch-c) Thermal resistance (ch-a) Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Safe operation area ...
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... iss oss rss MHz = 25° 100 ( V ) Drain-source voltage V DS SJG00029BED 2SK3192 3 ...
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Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...