2SK3269 Panasonic Semiconductor, 2SK3269 Datasheet - Page 2

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2SK3269

Manufacturer Part Number
2SK3269
Description
N-channel enhancement mode MOSFET
Manufacturer
Panasonic Semiconductor
Datasheet
2SK3269
■ Electrical Characteristics (continued) T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2
Diode foward voltage
Thermal resistance (ch-c)
Thermal resistance (ch-a)
1 000
10
100
10
−1
1
0.1
I
I
DP
D
Drain-source voltage V
R
Limited
DS(on)
Safe operation area
Parameter
/ R
DS(on)
1
t =
10 ms
Non repetitive pulse
T
t =
100 ms
C
= 25°C
10
DS
t = 100 µs
t =
1 ms
D
C
( V )
100
Symbol
R
R
V
th(ch-c)
th(ch-a)
DSF
60
50
40
30
20
10
0
0
I
DR
Ambient temperature T
C
25
= 15 A, V
SJG00032AED
= 25°C ± 3°C
(2)
50
P
(1)
D
(1) T
(2) Without heat sink:
 T
Conditions
75
GS
P
D
C
= 1.4 W
= T
= 0
a
100
a
a
125
( °C )
150
Min
Typ
3.125
Max
89.3
1.4
°C/W
°C/W
Unit
V

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