2SK3374 Panasonic, 2SK3374 Datasheet - Page 2

• Manufacturer Part Number: 2SK3374
• Description: Field Effect Transistor Silicon N Channel MOS Type
• Manufacturer: Panasonic

Electrical Characteristics (Ta = = = = 25°C)
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Drain-source breakdown voltage
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
K3374
Characteristics
※
Characteristics
Rise time
Turn-ON time
Fall time
Turn-OFF time
Type
(Note 1)
※ Lot Number
V
V
R
Symbol
(BR) GSS
(BR) DSS
DS (ON)
ïY
I
I
C
C
C
Q
Q
GSS
DSS
V
t
t
Q
oss
on
off
rss
t
t
iss
gd
th
fs
gs
r
f
Symbol
g
V
ï
I
I
DRP
Q
DSF
DR
t
rr
rr
Duty < = 1%, t
V
I
V
I
V
V
V
V
V
V
Month (starting from alphabet A)
Year
G
D
GS
DS
DS
GS
DS
DS
GS
DD
10 V
= ±10 mA, V
= 10 mA, V
0 V
I
I
dI
DR
DR
= ±25 V, V
= 450 V, V
= 10 V, I
= 10 V, I
= 10 V, I
= 25 V, V
~ - 360 V, V
DR
2
= 1 A, V
= 1 A, V
(Ta = = = = 25°C)
/dt = 100 A/ms
(last number of the christian era)
w
Test Condition
D
D
D
= 10 ms
GS
GS
Test Condition
DS
= 1 mA
= 0.5 A
DS
GS
= 0.5 A
GS
GS
GS
= 0 V
= 0 V, f = 1 MHz
= 0 V
= 0 V
= 0 V
= 10 V, I
= 0 V
= 0 V,
I
¾
¾
D
= 0.5 A
V
DD
D
R
~ - 200 V
L
= 1 A
= 400 W
V
OUT
Min
±30
450
Min
2.0
0.3
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
Typ.
Typ.
180
350
3.7
0.7
1.3
20
15
30
70
¾
¾
¾
¾
¾
¾
¾
¾
2
7
5
3
2
2002-08-09
2SK3374
Max
Max
-1.7
±10
100
4.0
4.6
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
1
2
Unit
Unit
mA
mA
pF
nC
nC
ns
ns
W
V
V
V
S
A
A
V