2SK3396 Panasonic Semiconductor, 2SK3396 Datasheet
2SK3396
Manufacturer Part Number
2SK3396
Description
Silicon N-Channel Junction FET
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SK3396.pdf
(3 pages)
Silicon Junction FETs (Small Signal)
2SK3396
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For infrared sensor
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: July 2003
• Low gate-source cutoff current I
• Small capacitance of short-circuit forward transfer capacitance
Gate-drain voltage (Source open)
Gate-source voltage (Drain open)
Gate current
Drain current
Power dissipation
Channel temperature
Storage temperature
Gate-drain surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Forward transfer admittance
Gate-source cutoff voltage
Short-circuit forward transfer capacitance
(Common source)
Short-circuit output capacitance
(Common source)
Reverse transfer capacitance
(Common source)
(common source) C
source) C
oss
Parameter
Parameter
, reverse transfer capacitance (common source) C
iss
, short-circuit output capacitance (common
GSS
a
Symbol
= 25°C ± 3°C
V
V
Symbol
T
T
P
I
I
GDO
V
Y
GSO
V
a
G
D
stg
I
I
C
ch
C
C
D
DSS
GSS
GDS
GSC
= 25°C
oss
iss
rss
fs
−55 to +125
Rating
I
V
V
V
V
V
V
V
G
−40
−40
100
125
DS
GS
DS
DS
DS
DS
DS
10
= −10 µA, V
1
SJF00036AED
= 10 V, V
= −20 V, V
= 10 V, V
= 10 V, I
= 10 V, V
= 10 V, V
= 10 V, V
Conditions
Unit
mW
D
mA
mA
°C
°C
GS
GS
GS
GS
GS
V
V
DS
= 1 µA
DS
rss
= 0
= 0, f = 1 kHz
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0
= 0
Marking Symbol: EB
0.23
+0.05
–0.02
0.33
5°
+0.05
–0.02
(0.40)
3
0.80
1.20
1
0.05
Min
−40
30
±0.05
±0.05
(0.40)
2
−1.3
Typ
1.0
0.4
0.4
SSSMini3-F1 Package
− 0.5
Max
−3.0
200
0.10
+0.05
–0.02
1: Source
2: Drain
3: Gate
Unit: mm
Unit
mS
µA
nA
pF
pF
pF
V
V
1
Related parts for 2SK3396
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Silicon N-Channel Junction FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For Switching
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon MOS FETs
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel Junction FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon P-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For Impedance Conversion In Low Frequency
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For Impedance Conversion In Low Frequency
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For Low-Frequency Amplification
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel Junction FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For switching
Manufacturer:
Panasonic Semiconductor
Datasheet:
2SK3396 Summary of contents
Page 1
... Silicon Junction FETs (Small Signal) 2SK3396 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor ■ Features • Low gate-source cutoff current I • Small capacitance of short-circuit forward transfer capacitance (common source short-circuit output capacitance (common iss source reverse transfer capacitance (common source) C oss ■ ...
Page 2
... 120 100 120 Ambient temperature T (°C) a Y 0. 25° 0.10 0.08 0.06 0.04 0.02 0 −2.5 −2.0 −1.5 −1.0 − 0.5 Gate-source voltage V ( 0.14 = 25° 0. 0.10 0.08 0.06 0.04 0. Drain-source voltage V DS ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...