2SK3494 Panasonic Semiconductor, 2SK3494 Datasheet - Page 2

• Manufacturer Part Number: 2SK3494
• Description: N-channel enhancement mode MOSFET
• Manufacturer: Panasonic Semiconductor

2SK3494
■ Electrical Characteristics (continued) T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2
Diode foward voltage
Reverse recovery time
Reverse recovery charge
Gate charge load
Gate-source charge
Gate-drain charge
Thermal resistance (ch-c)
Thermal resistance (ch-a)
1 000
10
10
100
10
−1
−2
1
1
I
I
D
DP
Drain-source voltage V
Safe operation area
Parameter
10
Non repetitive pulse
T
C
= 25°C
100
DS
t = 100 µs
t =
10 ms
t =
1 ms
( V )
D
C
1 000
Symbol
R
R
V
th(ch-c)
th(ch-a)
Q
Q
Q
Q
t
DSF
rr
gs
gd
rr
g
100
50
0
0
I
L = 230 µH, V
I
V
V
DR
DR
Ambient temperature T
DD
GS
C
25
= 20 A, V
= 10 A, di/dt = 100 A/µs
SJG00037AED
= 10 V
(2)
= 25°C ± 3°C
= 100 V, I
50
P
(1)
C
(1) T
(2) Without heat sink
 T
Conditions
75
GS
DD
D
C
= 0
= 10 A
= T
a
= 100 V
100
a
a
125
( °C )
150
Min
Typ
142
668
8.4
41
14
Max
−1.5
89.2
2.5
°C/W
°C/W
Unit
nC
nC
nC
nC
ns
V