2SK3577 NEC Electronics, 2SK3577 Datasheet

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2SK3577

Manufacturer Part Number
2SK3577
Description
Switching N-Channel Power MOS FET
Manufacturer
NEC Electronics
Datasheet

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Document No.
Date Published
Printed in Japan
ORDERING INFORMATION
Marking: XL
ABSOLUTE MAXIMUM RATINGS (T
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
DESCRIPTION
directly by a 2.5 V power source.
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Notes 1. PW
The 2SK3577 is a switching device which can be driven
The device features a low on-state resistance and excellent
2.5 V drive available
Low on-state resistance
R
R
R
DS(on)1
DS(on)2
DS(on)3
PART NUMBER
2. Mounted on FR-4 board, t
2SK3577
D15938EJ1V0DS00 (1st edition)
May 2002 NS CP(K)
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
= 63 m MAX. (V
= 65 m MAX. (V
= 91 m MAX. (V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
10 s, Duty Cycle
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Note1
A
= 25°C)
DS
A
A
GS
GS
GS
GS
= 25°C)
= 25°C)
= 0 V)
= 0 V)
= 4.5 V, I
= 4.0 V, I
= 2.5 V, I
SC-96 (Mini Mold Thin Type)
1%
Note2
5 sec.
PACKAGE
D
D
D
= 2.0 A)
= 2.0 A)
= 2.0 A)
A
= 25°C)
FOR SWITCHING
DATA SHEET
I
D(pulse)
I
V
V
D(DC)
P
P
T
T
DSS
GSS
stg
T1
T2
ch
MOS FIELD EFFECT TRANSISTOR
–55 to +150
±3.5
1.25
±12
±14
150
0.2
30
PACKAGE DRAWING (Unit: mm)
°C
°C
W
W
V
V
A
A
1
0.95
2.9 ±0.2
1.9
3
0.95
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
0.4
1 : Gate
2 : Source
3 : Drain
2SK3577
+0.1
–0.05
2
©
Source
Drain
0.9 to 1.1
0.65
Body
Diode
0.16
0 to 0.1
+0.1
–0.06
2001

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2SK3577 Summary of contents

Page 1

... N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK3577 is a switching device which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES 2.5 V drive available ...

Page 2

... 3 F( 90% 90 10% 10 d(on) d(off off Data Sheet D15938EJ1V0DS 2SK3577 MIN. TYP. MAX. UNIT 0.5 1.0 1.5 V 1.0 4 260 200 120 ns 3 ...

Page 3

... Without board Mounted on FR-4 board × × 1.6 mm 100 Pulse Width - s Data Sheet D15938EJ1V0DS 2SK3577 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 100 125 150 175 T - Ambient Temperature - C A 100 1000 3 ...

Page 4

... DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 100 150 0 Data Sheet D15938EJ1V0DS 2SK3577 = 125°C A 75°C 25°C 25° Gate to Source Voltage - 25°C 25°C 75°C 125°C 0.1 ...

Page 5

... Drain to Source Voltage - V DS SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 = 10 V Pulsed = 4 d(off) 0.1 d(on) 0.01 10 0.4 0 Source to Drain Voltage - V SD Data Sheet D15938EJ1V0DS 2SK3577 T = 125°C A 75°C 25°C 25° 100 I - Drain Current - MHz C iss C oss C rss ...

Page 6

... DYNAMIC INPUT/OUTPUT CHARACTERISTICS 3 Gate Charge - Data Sheet D15938EJ1V0DS 2SK3577 ...

Page 7

... Data Sheet D15938EJ1V0DS 2SK3577 7 ...

Page 8

... NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Please check with an NEC sales representative for 2SK3577 The M8E 00. 4 ...

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