2SK3637 Panasonic Semiconductor, 2SK3637 Datasheet
2SK3637
Related parts for 2SK3637
2SK3637 Summary of contents
Page 1
... Power MOSFETs 2SK3637 Silicon N-channel power MOSFET For PDP/For high-speed switching ■ Features • Low on-resistance, low Q • High avalanche resistance ■ Absolute Maximum Ratings T Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability Power = 25° ...
Page 2
... Electrical Characteristics (Continued) T Parameter Total gate charge Gate-source charge Gate-drain charge Channel-case heat resistance Channel-atmosphere heat resistance Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Safe operation area 3 10 Non repetitive pulse = 25°C ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...