2SK973 Hitachi Semiconductor, 2SK973 Datasheet - Page 5

• Manufacturer Part Number: 2SK973
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

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100
80
60
40
20
500
200
100
0
50
20
10
5
0.2
V
Dynamic Input Characteristics
DS
di/dt = 50 A/ s, Ta = 25°C
V
Pulse Test
Reverse Drain Current I
2
Body to Drain Diode Reverse
GS
0.5
V
Gate Charge Qg (nc)
DD
= 0
V
= 50 V
DD
1.0
Recovery Time
25 V
10 V
4
= 50 V
25 V
10 V
2
6
V
I
GS
D
5
= 2 A
DR
8
10
(A)
10
20
16
12
8
4
0
20
1000
100
300
100
50
20
10
30
10
5
2
1
0.05
3
1
0
V
PW = 2 s, duty < 1 %
Drain to Source Voltage V
GS
0.1
10
Switching Characteristics
= 10 V
Drain to Source Voltage
Typical Capacitance vs.
Drain Current I
0.2
20
t
0.5
f
t
Coss
Ciss
d (off)
2SK973 L , 2SK973 S
30
1.0
Crss
D
t
d (on)
(A)
V
f = 1 MHz
t
GS
r
DS
40
2
= 0
(V)
50
5