SI4362DY Vishay Siliconix, SI4362DY Datasheet - Page 3

• Manufacturer Part Number: SI4362DY
• Description: N-Channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Document Number: 71628
S-40762—Rev. E, 19-Apr-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.010
0.008
0.006
0.004
0.002
0.000
5
4
3
2
1
0
50
10
1
0.00
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
On-Resistance vs. Drain Current
= 20 A
0.2
10
10
= 15 V
V
Q
SD
T
g
J
= 150_C
− Total Gate Charge (nC)
− Source-to-Drain Voltage (V)
I
D
V
0.4
GS
− Drain Current (A)
Gate Charge
20
20
= 4.5 V
0.6
30
30
0.8
V
GS
T
40
40
J
= 10 V
= 25_C
1.0
50
50
1.2
0.025
0.020
0.015
0.010
0.005
0.000
8000
6000
4000
2000
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
−25
rss
V
I
D
GS
= 20 A
V
2
V
GS
6
= 10 V
DS
T
J
0
− Gate-to-Source Voltage (V)
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
Capacitance
25
C
4
12
oss
Vishay Siliconix
50
C
iss
6
18
75
I
Si4362DY
D
= 20 A
100
www.vishay.com
8
24
125
10
150
30
3