SI4442DY Vishay Intertechnology, SI4442DY Datasheet

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SI4442DY

Manufacturer Part Number
SI4442DY
Description
N-Channel 30-V MOSFET
Manufacturer
Vishay Intertechnology
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
SI4442DY
Manufacturer:
SK
Quantity:
190
Part Number:
SI4442DY
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4442DY-T1-E3
Quantity:
5 600
Part Number:
SI4442DY-T1-E3
Manufacturer:
VISHAY
Quantity:
15 000
Part Number:
SI4442DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4442DY-T1-E3
Quantity:
70 000
DataSheet4U.com
www.DataSheet4U.com
DataSheet
Notes
a.
Document Number: 71358
S-40843—Rev. C, 03-May-04
4
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
U
V
Surface Mounted on 1” x 1” FR4 Board.
.com
DS
30
Ordering Information: Si4442DY
(V)
G
S
S
S
J
J
0.0075 @ V
a
a
0.0045 @ V
0.005 @ V
= 150_C)
= 150_C)
a
a
Si4442DY-T1 (with Tape and Reel)
Si4442DY—E3 (Lead Free)
Si4442DY-T1—E3 (Lead Free with Tape and Reel)
1
2
3
4
Parameter
Parameter
r
DS(on)
a
a
Top View
GS
GS
SO-8
GS
(W)
N-Channel 30-V (D-S) MOSFET
= 4.5 V
= 2.5 V
= 10 V
a
8
7
6
5
D
D
D
D
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 10 sec
A
A
A
A
I
DataSheet4U.com
= 25_C
= 70_C
= 25_C
= 70_C
D
22
19
17
(A)
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
DM
I
I
I
thJA
thJF
DS
GS
D
D
S
D
D
stg
G
N-Channel MOSFET
10 secs
Typical
DataSheet4U.com
2.9
3.5
2.2
22
17
29
67
13
D
S
−55 to 150
"12
30
60
Steady State
Maximum
Vishay Siliconix
1.3
1.6
15
11
35
80
16
1
Si4442DY
www.vishay.com
Unit
Unit
_C/W
_C
W
W
V
V
A
A
1

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SI4442DY Summary of contents

Page 1

... Ordering Information: Si4442DY Si4442DY-T1 (with Tape and Reel) Si4442DY—E3 (Lead Free) Si4442DY-T1—E3 (Lead Free with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current (10 ms Pulse Width) ...

Page 2

... Si4442DY Vishay Siliconix SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

Page 3

... Document Number: 71358 S-40843—Rev. C, 03-May-04 4 DataSheet U .com DataSheet4U.com 60 80 100 T = 25_C J 0.6 0.8 1.0 1.2 Si4442DY Vishay Siliconix Capacitance 6000 5000 C iss 4000 3000 2000 C oss 1000 C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...

Page 4

... Si4442DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 −0.0 −0.2 −0.4 −0.6 −0.8 −50 − − Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 − Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 10 DataSheet4U.com www.vishay.com 4 4 DataSheet U .com I = 250 ...

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