SI4559EY Vishay Siliconix, SI4559EY Datasheet - Page 6

• Manufacturer Part Number: SI4559EY
• Description: N-Channel 60-V (D-S)/ 175C MOSFET
• Manufacturer: Vishay Siliconix

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2-6
Si4559EY
Vishay Siliconix
0.01
0.1
–0.25
0.75
0.50
0.25
0.00
2
1
20
10
10
1
0.00
–50
–4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
–25
Source-Drain Diode Forward Voltage
0.25
V
SD
Single Pulse
0
T
– Source-to-Drain Voltage (V)
J
Threshold Voltage
T
0.50
= 175 C
J
25
I
D
– Temperature ( C)
= 250 A
10
50
–3
0.75
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
1.00
100
T
J
= 25 C
125
1.25
10
150
–2
Square Wave Pulse Duration (sec)
1.50
175
10
–1
50
40
30
20
10
0.5
0.4
0.3
0.2
0.1
0
0.01
0
2
On-Resistance vs. Gate-to-Source Voltage
Single Pulse
T
V
C
GS
= 25 C
0.1
4
1
– Gate-to-Source Voltage (V)
Single Pulse Power
I
D
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
= 3.1 A
P
DM
Time (sec)
JM
– T
t
1
6
A
= P
1
t
2
DM
S-57253—Rev. D, 24-Feb-98
Z
thJA
Document Number: 70167
thJA
t
t
1
2
(t)
10
= 62.5 C/W
8
10
30
30
10