SI4618DY Vishay Siliconix, SI4618DY Datasheet - Page 5

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SI4618DY

Manufacturer Part Number
SI4618DY
Description
Dual N-Channel 30-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74450
S-70193-Rev. A, 29-Jan-07
0.001
- 0.1
- 0.4
- 0.7
- 1.0
0.01
100
0.5
0.2
0.1
10
1
- 50
0.00
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
150 °C
0.6
50
I
75
D
0.01
100
25 °C
0.1
0.8
= 250 µA
10
1
0
1 .
100
I
D
Safe Operating Area, Junction-to-Ambient
*V
*Limited by r
= 5 mA
GS
1.0
125
V
minimum V
DS
1.2
DS(on)
150
- Drain-to-Source Voltage (V)
Single Pulse
1
T
A
GS
= 25 °C
at which r
DS(on)
10
0.10
0.08
0.06
0.04
0.02
0.00
is specified
100
80
60
40
20
0
0
0
0 .
1 ms
10 ms
1 s
10 s
100 ms
dc
0
On-Resistance vs. Gate-to-Source Voltage
1
I
D
Single Pulse Power, Junction-to-Ambient
1
= 8 A
1
0
0
2
V
GS
0.01
3
- Gate-to-Source Voltage (V)
4
Time (sec)
125 °C
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25 °C
0.1
5
Vishay Siliconix
6
Si4618DY
7
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1
8
9
10
1
0
5

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