SI4628DY Vishay, SI4628DY Datasheet

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SI4628DY

Manufacturer Part Number
SI4628DY
Description
N-Channel 30-V (D-S) MOSFET
Manufacturer
Vishay
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
SI4628DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 922
www.DataSheet.co.kr
Document Number: 64811
S09-0871-Rev. A, 18-May-09
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 80 °C/W.
Ordering Information: Si4628DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
30
(V)
C
G
S
S
S
= 25 °C.
N-Channel 30-V (D-S) MOSFET with Schottky Diode
0.0038 at V
0.0030 at V
1
2
3
4
R
DS(on)
Top View
GS
GS
SO-8
(Ω)
J
= 4.5 V
= 10 V
= 150 °C)
b, d
8
7
6
5
I
D
D
D
D
D
38
33
(A)
a
A
Q
= 25 °C, unless otherwise noted
27.5 nC
g
Steady State
(Typ.)
t ≤ 10 s
T
T
T
L = 0.1 mH
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• SkyFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
Definition
Power MOSFET and Schottky Diode
Notebook CPU Core
Buck Converter
Symbol
R
R
thJA
thJF
N-Channel MOSFET
Symbol
T
®
g
J
V
V
E
I
I
P
, T
DM
I
I
AS
GS
DS
AS
and UIS Tested
D
S
D
Monolithic TrenchFET
stg
G
Typ.
29
13
D
S
- 55 to 150
25.4
3.1
3.5
2.2
Limit
20
± 20
101
7.8
30
38
30
70
45
7
5
b, c
b, c
b, c
b, c
b, c
Vishay Siliconix
Schottky Diode
®
Max.
35
16
Gen III
Si4628DY
www.vishay.com
Unit
mJ
°C
W
V
A
°C/W
Unit
1
Datasheet pdf - http://www.DataSheet4U.net/

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SI4628DY Summary of contents

Page 1

... SO Top View Ordering Information: Si4628DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... Si4628DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On -State Drain Current Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance ...

Page 3

... Document Number: 64811 S09-0871-Rev. A, 18-May- thru 1.0 1.5 2.0 2 Drain Current ( Gate Charge Si4628DY Vishay Siliconix ° 125 ° ° 0.0 0.6 1.2 1.8 2 Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... Si4628DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.0 0.2 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage - Temperature (°C) J Reverse Current (Schottky) www.vishay.com °C J 0.6 0.8 1 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 75 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si4628DY Vishay Siliconix 100 125 150 2.0 1.6 1.2 0.8 0.4 0 100 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www ...

Page 6

... Si4628DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. ’Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

... B 0.35 0.51 C 0.19 0.25 D 4.80 5.00 E 3.80 4.00 e 1.27 BSC H 5.80 6.20 h 0.25 0.50 L 0.50 0.93 q 0° 8° S 0.44 0.64 Package Information Vishay Siliconix All Leads 0.101 mm q 0.004" INCHES Min Max 0.053 0.069 0.004 0.008 0.014 0.020 0.0075 0.010 0.189 0.196 0.150 0.157 0.050 BSC 0.228 0.244 0.010 0.020 0.020 0.037 0° ...

Page 8

... See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/ppg?72286), for the basis of the pad design for a LITTLE FOOT SO-8 power MOSFET. In converting this recommended minimum pad ...

Page 9

... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 Return to Index Return to Index www.vishay.com 22 0.172 (4.369) 0.028 (0.711) 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72606 Revision: 21-Jan-08 Datasheet pdf - http://www.DataSheet4U.net/ ...

Page 10

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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