SI4816DY Vishay Siliconix, SI4816DY Datasheet

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SI4816DY

Manufacturer Part Number
SI4816DY
Description
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Manufacturer
Vishay Siliconix
Datasheet

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Notes
a.
b.
Document Number: 71121
S-41697—Rev. E, 20-Sep-04
PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Channel-1
Channel-1
Channel 2
Channel-2
Surface Mounted on 1” x 1” FR4 Board.
Starting date code W46BAA.
V
DS
30
(V)
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Ordering Information: Si4816DY
b
A/S
A/S
V
G
G
DS
Parameter
Parameter
1
2
2
2
30
30
Diode Forward Voltage
(V)
J
J
a
a
1
2
3
4
= 150_C)
= 150_C)
a
a
b
0.50 V @ 1.0 A
Si4816DY-T1 (with Tape and Reel)
Si4816DY—E3 (Lead (Pb)-Free)
Si4816DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
V
Top View
SD
SO-8
0.0185 @ V
a
a
0.030 @ V
0.022 @ V
0.013 @ V
(V)
r
DS(on)
Steady-State
Steady-State
a
L = 0 1 mH
L = 0.1 mH
t ≤ 10 sec
T
T
T
T
A
A
A
A
GS
GS
GS
GS
= 25_C
= 70_C
= 25_C
= 70_C
8
7
6
5
(Ω)
= 4.5 V
= 10 V
= 10 V
= 4.5 V
D
D
D
D
1
2
2
2
/S
/S
/S
A
1
1
1
Symbol
Symbol
= 25_C UNLESS OTHERWISE NOTED)
T
R
R
R
V
J
V
E
I
I
P
P
, T
I
I
DM
I
AS
thJA
thJC
I
DS
GS
AS
D
D
S
F
D
D
stg
I
2.0
D
(A)
6.3
5.4
8.6
10
(A)
10 secs
Typ
100
72
51
Channel-1
6.3
5.4
1.3
1.4
0.9
Channel-1
Max
125
7.2
30
12
90
63
Steady State
0.64
5.3
4.2
0.9
1.0
FEATURES
D LITTLE FOOTr Plus Power MOSFET
D 100% R
Typ
43
82
25
N-Channel 1
N-Channel 2
Channel-2
MOSFET
MOSFET
--55 to 150
G
G
1
2
30
20
10 secs
g
Max
100
53
30
Tested
8.2
2.2
2.4
1.5
10
D
S
1
Channel-2
2
Vishay Siliconix
31.25
Typ
40
25
48
80
28
Steady State
Schottky
A
Schottky Diode
1.15
1.25
7.7
6.2
0.8
Si4816DY
S
Max
1
100
60
35
/D
2
www.vishay.com
Unit
Unit
_C/W
mJ
C/
_C
W
W
V
V
A
1

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SI4816DY Summary of contents

Page 1

... A Top View Ordering Information: Si4816DY Si4816DY-T1 (with Tape and Reel) Si4816DY—E3 (Lead (Pb)-Free) Si4816DY-T1—E3 (Lead (Pb)-Free with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C) ...

Page 2

... Si4816DY Vishay Siliconix MOSFET SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate Threshold Voltage Gate Body Leakage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current State Drain Current On-State Drain Current b b Drain-Source On-State Resistance Drain Source On State Resistance ...

Page 3

... Q -- Total Gate Charge (nC) g Document Number: 71121 S-41697—Rev. E, 20-Sep- 1000 800 600 400 GS 200 Si4816DY Vishay Siliconix CHANNEL-1 Transfer Characteristics 125_C C 6 25_C --55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Capacitance ...

Page 4

... Si4816DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.6 0.4 = 250 0.2 --0.0 --0.2 --0.4 --0.6 --0.8 --1.0 --50 -- Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

Page 5

... I -- Drain Current (A) D Document Number: 71121 S-41697—Rev. E, 20-Sep- Square Wave Pulse Duration (sec 2500 2000 1500 1000 32 40 Si4816DY Vishay Siliconix CHANNEL CHANNEL-2 Transfer Characteristics 125_C 25_C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 Gate-to-Source Voltage (V) ...

Page 6

... Si4816DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 9 Total Gate Charge (nC) g Source-Drain Diode Forward Voltage 150_C 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.6 0.4 = 250 0.2 --0.0 --0.2 --0.4 --0.6 --0.8 --1.0 --50 -- ...

Page 7

... Document Number: 71121 S-41697—Rev. E, 20-Sep-04 Normalized Thermal Transient Impedance, Junction-to-Ambient - - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot - -2 10 Square Wave Pulse Duration (sec) Si4816DY Vishay Siliconix CHANNEL-2 Notes Duty Cycle ...

Page 8

... Si4816DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 0 0.01 0.001 0.0001 Temperature (_C) J Capacitance 200 160 120 80 C oss Drain-to-Source Voltage (V) DS www.vishay.com 8 100 125 150 SCHOTTKY Forward Voltage Drop ...

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