SI4864DY Vishay Siliconix, SI4864DY Datasheet
SI4864DY
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SI4864DY Summary of contents
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... 70_C stg Symbol sec R R thJA Steady State Steady State R thJF Si4864DY Vishay Siliconix FEATURES D TrenchFETr Power MOSFETS: 2.5-V Rated D Low 3.5-mW r DS(on) D PWM (Q and R ) Optimized gd G APPLICATIONS D Low-Side MOSFET in Synchronous Buck DC/DC Converters in Servers and Routers N-Channel MOSFET ...
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... Si4864DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...
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... Source-to-Drain Voltage (V) SD Document Number: 71449 S-03662—Rev. B, 14-Apr-03 New Product 25_C J 0.8 1.0 1.2 Si4864DY Vishay Siliconix Capacitance 7500 6000 C iss 4500 3000 C oss 1500 C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...
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... Si4864DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 = 250 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...