SI4884DY Fairchild Semiconductor, SI4884DY Datasheet

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SI4884DY

Manufacturer Part Number
SI4884DY
Description
Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

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Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
Si4884DY
Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET
© 2001 Fairchild Semiconductor International
D
General Description
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
The MOSFET features faster switching and lower gate
charge than other MOSFETs with comparable R
specifications.
The result is a MOSFET that is easy and safer to drive (even
at very high frequencies), and DC/DC power supply designs
with higher overall efficiency.
Absolute Maximum Ratings
J
DSS
GSS
D
,T
JA
JC
STG
SOT-23
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Power Dissipation for Single Operation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D
SO-8
D
SuperSOT
- Pulsed
D
pin 1
TM
-6
S
T
A
= 25
S
SuperSOT
o
S
C unless other wise noted
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1a)
G
(Note 1a)
(Note 1)
TM
-8
DS(ON)
SO-8
Features
11.5 A, 30 V. R
Optimized for use in switching DC/DC converters with
PWM controllers.
Very fast switching.
Low gate charge (typical Qg = 19 nC).
5
6
7
8
-55 to 150
Si4884DY
DS(ON)
±20
11.5
R
2.5
1.2
SOT-223
30
50
25
50
1
DS(ON)
= 0.010
= 0.015
@ V
@ V
January 2001
GS
SOIC-16
= 10 V
GS
1
3
2
4
= 4.5 V.
Si4884DY Rev.A
°C/W
°C/W
Units
°C
W
V
V
A

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SI4884DY Summary of contents

Page 1

... SuperSOT - unless other wise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) January 2001 = 0.010 @ DS(ON 0.015 @ V = 4.5 V. DS(ON) GS SOIC-16 SOT-223 Si4884DY 30 ±20 11.5 50 2.5 1.2 1 -55 to 150 50 °C/W 25 °C/W Si4884DY Rev.A Units °C ...

Page 2

... J 0.0125 0.015 50 40 2070 510 235 2.1 1.2 is guaranteed 125 C 0.006 in of 2oz copper. Si4884DY Rev.A Units V o mV/ C µA µ pad ...

Page 3

... DRAIN CURRENT (A) D Drain Current and Gate Voltage 11. 125 ,GATE-SOURCE VOLTAGE (V) GS Gate-to-Source Voltage. = 125°C J 25°C -55°C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. Si4884DY Rev 1.2 ...

Page 4

... DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =See Note 25°C A 0.01 0 SINGLE PULSE TIME (SEC) Dissipation. R ( =See Note 1c JA P(pk ( Duty Cycle 100 300 20 30 100 300 Si4884DY Rev.A ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...

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