SI4884DY Fairchild Semiconductor, SI4884DY Datasheet
SI4884DY
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SI4884DY Summary of contents
Page 1
... SuperSOT - unless other wise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) January 2001 = 0.010 @ DS(ON 0.015 @ V = 4.5 V. DS(ON) GS SOIC-16 SOT-223 Si4884DY 30 ±20 11.5 50 2.5 1.2 1 -55 to 150 50 °C/W 25 °C/W Si4884DY Rev.A Units °C ...
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... J 0.0125 0.015 50 40 2070 510 235 2.1 1.2 is guaranteed 125 C 0.006 in of 2oz copper. Si4884DY Rev.A Units V o mV/ C µA µ pad ...
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... DRAIN CURRENT (A) D Drain Current and Gate Voltage 11. 125 ,GATE-SOURCE VOLTAGE (V) GS Gate-to-Source Voltage. = 125°C J 25°C -55°C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. Si4884DY Rev 1.2 ...
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... DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =See Note 25°C A 0.01 0 SINGLE PULSE TIME (SEC) Dissipation. R ( =See Note 1c JA P(pk ( Duty Cycle 100 300 20 30 100 300 Si4884DY Rev.A ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...