SI4896DY Vishay Siliconix, SI4896DY Datasheet

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SI4896DY

Manufacturer Part Number
SI4896DY
Description
N-Channel 80-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Notes
a.
Document Number: 71300
S-03950—Rev. B, 26-May-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanch Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
Ordering Information: Si4896DY
80
80
(V)
J
ti
G
S
S
S
t A bi
1
2
3
4
J
J
a
a
0.0165 @ V
Si4896DY-T1 (with Tape and Reel)
0.022 @ V
= 150_C)
= 150_C)
t
a
a
Top View
Parameter
Parameter
SO-8
r
DS(on)
a
a
GS
GS
(W)
N-Channel 80-V (D-S) MOSFET
= 6.0 V
= 10 V
8
7
6
5
a
D
D
D
D
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
L = 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
I
= 25_C
= 70_C
= 25_C
= 70_C
D
9.5
8.3
(A)
Symbol
Symbol
T
R
R
R
V
J
V
I
I
P
P
G
DM
, T
I
I
AS
I
thJA
thJF
DS
GS
D
D
S
D
D
stg
N-Channel MOSFET
D
S
10 secs
Typical
9.5
7.6
2.8
3.1
2.0
33
65
17
- 55 to 150
"20
80
50
40
Steady State
Maximum
Vishay Siliconix
1.56
6.7
5.4
1.4
1.0
40
80
21
Si4896DY
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
1

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SI4896DY Summary of contents

Page 1

... SO Top View Ordering Information: Si4896DY Si4896DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Avalanch Current Continuous Source Current (Diode Conduction) ...

Page 2

... Si4896DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...

Page 3

... V - Source-to-Drain Voltage (V) SD Document Number: 71300 S-03950—Rev. B, 26-May-03 3000 2500 2000 1500 1000 25_C J 0.8 1.0 1.2 Si4896DY Vishay Siliconix Capacitance C iss C rss 500 C oss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 2 ...

Page 4

... Si4896DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 1.0 0.5 = 250 0.0 - 0.5 - 1 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 100 10 1 0.1 100 125 150 Single Pulse Power 60 50 ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 71300 S-03950—Rev. B, 26-May- Square Wave Pulse Duration (sec) Si4896DY Vishay Siliconix 10 100 1000 www.vishay.com 5 ...

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