SI4904DY Vishay Siliconix, SI4904DY Datasheet - Page 4

• Manufacturer Part Number: SI4904DY
• Description: Dual N-Channel 40-V MOSFET
• Manufacturer: Vishay Siliconix

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Si4904DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.01
100
0.4
0.2
0.1
20
10
0
- 50
1
0.0
I
D
I
Source-Drain Diode Forward Voltage
D
- 25
= 5 mA
= 250 µA
0.2
V
SD
0
– Source-to-Drain Voltage (V)
T
Threshold Voltage
T
0.4
J
J
= 150 °C
– Temperature (°C)
25
0.6
50
75
0.8
T
0.01
100
J
0.1
10
100
= 25 °C
1
0.1
Limited by R
* V
Safe Operating Area, Junction-to-Ambient
1.0
GS
125
V
minimum V
1.2
150
DS
DS(on)
– Drain-to-Source Voltage (V)
Single Pulse
1
T
*
A
GS
= 25 °C
at which R
DS(on)
0.10
0.08
0.06
0.04
0.02
10
50
40
30
20
10
0
0.001
0
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
100 ms
1 ms
10 ms
1 s
10 s
DC
2
0.01
V
100
GS
3
– Gate-to-Source Voltage (V)
4
Time (s)
T
T
A
A
0.1
= 25 °C
5
= 125 °C
S09-0540-Rev. C, 06-Apr-09
Document Number: 73793
6
7
I
D
1
= 5 A
8
9
10
10
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