SI4933DY Vishay Siliconix, SI4933DY Datasheet
SI4933DY
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SI4933DY Summary of contents
Page 1
... 70_C stg Symbol sec R thJA Steady State Steady State R thJF Si4933DY Vishay Siliconix FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process APPLICATIONS D Load Switching P-Channel MOSFET 10 secs Steady State -12 " ...
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... Si4933DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... S-22122—Rev. B, 25-Nov-02 New Product 6000 5000 4000 3000 = 2 2000 1000 0.030 0.025 0.020 0.015 0.010 0.005 0.000 1.0 1.2 1.4 Si4933DY Vishay Siliconix Capacitance C iss C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1.4 1 ...
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... Si4933DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 = 500 0.2 0.1 0.0 -0.1 -0.2 -50 - Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 New Product 100 125 150 Safe Operating Area, Junction-to-Ambient ...
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... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 71980 S-22122—Rev. B, 25-Nov-02 New Product - Square Wave Pulse Duration (sec) Si4933DY Vishay Siliconix 1 10 www.vishay.com 5 ...