SI4947DY Vishay Siliconix, SI4947DY Datasheet
SI4947DY
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SI4947DY Summary of contents
Page 1
... C Unless Otherwise Noted A Symbol stg Symbol R thJA Si4947DY P-Channel MOSFET ) Limit Unit – 3.5 2 –1.7 2 1.3 –55 to 150 C Limit Unit 62.5 C/W 1 ...
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... Si4947DY Specifications ( Unless Otherwise Noted) J Parameter Symbol Static Gate Threshold Voltage V Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current Drain Source On State Resistance Drain-Source On-State Resistance Forward Transconductance b Diode Forward Voltage ...
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... C 100 On-Resistance vs. Junction Temperature 1.6 1.4 1.2 1.0 0.8 0.6 0 –50 –25 Si4947DY Transfer Characteristics T = – 125 – Gate-to-Source Voltage (V) GS Capacitance C iss C oss rss – Drain-to-Source Voltage ( ...
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... Si4947DY Typical Characteristics (25 C Unless Otherwise Noted) Source-Drain Diode Forward Voltage 150 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.8 0 250 A 0.4 D 0.2 0.0 –0.2 –0.4 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...