SI4947DY Vishay Siliconix, SI4947DY Datasheet

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SI4947DY

Manufacturer Part Number
SI4947DY
Description
Dual P-Channel 30-V (D-S) Rated MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Product Summary
Absolute Maximum Ratings (
Thermal Resistance Ratings
Notes
a.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70156.
A SPICE Model data sheet is available for this product (FaxBack document #70554).
Dual P-Channel 30-V (D-S) Rated MOSFET
Siliconix
S-49520—Rev. C, 18-Dec-96
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
V
Surface Mounted on FR4 Board, t
DS
–30
30
(V)
G
G
S
S
1
1
2
2
0.085 @ V
0.19 @ V
1
2
3
4
J
J
a
a
r
= 150 C)
= 150 C)
Top View
DS(on)
a
SO-8
GS
Parameter
Parameter
GS
a
a
( )
= –4.5 V
10 sec.
= –10 V
8
7
6
5
a
D
D
D
D
1
1
2
2
T
A
I
D
= 25 C Unless Otherwise Noted
(A)
3.5
2.5
T
T
T
T
A
A
A
A
= 25 C
= 70 C
= 25 C
= 70 C
G
1
P-Channel MOSFET
D
S
1
1
Symbol
Symbol
T
R
V
V
I
J
P
P
DM
, T
I
I
I
thJA
DS
GS
D
D
S
D
D
stg
Si4947DY
G
2
P-Channel MOSFET
–55 to 150
Limit
Limit
–1.7
62.5
–30
2.0
1.3
3.5
2.8
20
20
D
S
2
2
)
1
Unit
Unit
C/W
W
W
V
V
A
A
C

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SI4947DY Summary of contents

Page 1

... C Unless Otherwise Noted A Symbol stg Symbol R thJA Si4947DY P-Channel MOSFET ) Limit Unit – 3.5 2 –1.7 2 1.3 –55 to 150 C Limit Unit 62.5 C/W 1 ...

Page 2

... Si4947DY Specifications ( Unless Otherwise Noted) J Parameter Symbol Static Gate Threshold Voltage V Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current Drain Source On State Resistance Drain-Source On-State Resistance Forward Transconductance b Diode Forward Voltage ...

Page 3

... C 100 On-Resistance vs. Junction Temperature 1.6 1.4 1.2 1.0 0.8 0.6 0 –50 –25 Si4947DY Transfer Characteristics T = – 125 – Gate-to-Source Voltage (V) GS Capacitance C iss C oss rss – Drain-to-Source Voltage ( ...

Page 4

... Si4947DY Typical Characteristics (25 C Unless Otherwise Noted) Source-Drain Diode Forward Voltage 150 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.8 0 250 A 0.4 D 0.2 0.0 –0.2 –0.4 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...

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