IRL3705N International Rectifier, IRL3705N Datasheet - Page 2

• Manufacturer Part Number: IRL3705N
• Description: HEXFET Power MOSFET
• Manufacturer: International Rectifier

IRL3705N
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
L
V
R
V
g
I
I
Q
Q
Q
t
t
t
t
L
C
C
C
DSS
I
I
V
t
Q
t
GSS
d(on)
r
d(off)
f
D
SM
on
V
fs
S
S
rr
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
g
gs
gd
SD
V
(BR)DSS
rr
Repetitive rating; pulse width limited by
R
max. junction temperature. ( See fig. 11 )
DD
G
= 25 , I
= 25V, starting T
/ T
J
Internal Drain Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
AS
= 46A. (See Figure 12)
J
= 25°C, L = 320µH
Parameter
Parameter
J
= 25°C (unless otherwise specified)
––– 0.056 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Pulse width
Min. Typ. Max. Units
1.0
–––
I
Calculated continuous current based on maximum allowable
T
55
50
–––
Min. Typ. Max. Units
SD
package refer to Design Tip # 93-4
–––
–––
–––
–––
junction temperature; for recommended current-handling of the
–––
J
Intrinsic turn-on time is negligible (turn-on is dominated by L
175°C
46A, di/dt
3600 –––
–––
––– 0.010
––– 0.012
––– 0.018
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
140
870
320
4.5
7.5
–––
–––
–––
12
290
37
78
94
–––
310
–––
–––
250
100
–––
–––
–––
–––
–––
–––
2.0
89
25
98
19
49
–––
140
440
1.3
300µs; duty cycle
250A/µs, V
V/°C
µA
nA
nC
nH
pF
ns
A
nC
V
V
S
ns
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
ƒ = 1.0MHz, See Fig. 5
I
V
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
integral reverse
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
DD
J
J
= 46A
= 46A
= 25°C, I
= 25°C, I
= 1.8
= 0.59
= 5.0V, I
= 4.0V, I
= 25V, I
= 55V, V
= 44V, V
= 16V
= 44V
= 28V
= 0V
= 25V
= 0V, I
= 10V, I
= V
= -16V
= 5.0V, See Fig. 6 and 13
V
2%.
GS
(BR)DSS
, I
D
V
D
D
S
F
D
See Fig. 10
= 250µA
D
D
GS
GS
GS
Conditions
= 46A
Conditions
= 46A, V
= 46A
= 46A
= 250µA
= 46A
= 39A
,
= 5.0V
= 0V
= 0V, T
D
= 1mA
GS
J
= 150°C
G
= 0V
G
S
+L
D
D
S
)
S
D