IRLM110A International Rectifier, IRLM110A Datasheet
IRLM110A
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IRLM110A Summary of contents
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... Symbol R Junction-to-Ambient * JA * When mounted on the minimum pad size recommended (PCB Mount). = 100V DS Characteristic (1) (2) (1) (1) ( Characteristic IRLM110A BV = 100 V DSS R = 0.44 DS(on 1 SOT-223 Gate 2. Drain 3. Source Value Units 100 V 1 ± ...
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... IRLM110A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...
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... Fig 6. Gate Charge vs. Gate-Source Voltage ( IRLM110A Fig 2. Transfer Characteristics ...
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... IRLM110A Fig 7. Breakdown Voltage vs. Temperature Junction Temperature [ J Fig 9. Max. Safe Operating Area DS(on ...
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... V GS Same Type as DUT 10V V DS DUT Current Sampling ( Resistor out 0.5 rated 10 DSS IRLM110A Charge 90 d(on) r d(off off BV 1 DSS ---- 2 -------------------- ...
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... IRLM110A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT Driver ) DUT ) DUT ) + Driver Same Type as DUT • dv/dt controlled by ＂R controlled by Duty Factor ＂D＂ • Gate Pulse Width -------------------------- D = Gate Pulse Period ...
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TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ DOME™ ...