IRLMS5703 International Rectifier, IRLMS5703 Datasheet

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IRLMS5703

Manufacturer Part Number
IRLMS5703
Description
HEXFET Power MOSFET
Manufacturer
International Rectifier
Datasheet

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Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The Micro6 package with its customized leadframe
produces a HEXFET power MOSFET with Rds(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and R
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
Absolute Maximum Ratings
Thermal Resistance Ratings
I
I
I
P
V
dv/dt
T
D
D
DM
J,
R
D
GS
@ T
@ T
T
@T
Generation V Technology
Micro6 Package Style
Ultra Low Rds(on)
P-Channel MOSFET
JA
STG
A
A
A
= 25°C
= 70°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Parameter
Parameter
GS
GS
DS(on)
@ -10V
@- 10V
G
D
D
1
2
3
T op V iew
Min.
–––
HEXFET
6
5
4
-55 to + 150
IRLMS5703
Max.
S
D
D
A
-2.3
-1.9
± 20
-13
M icro 6
1.7
5.0
13
Typ.
–––
®
R
Power MOSFET
DS(on)
V
DSS
Max
75
PD - 91413E
= -30V
= 0.20
Units
mW/°C
V/ns
Units
°C/W
°C
W
A
V
4/7/04

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IRLMS5703 Summary of contents

Page 1

... Gate-to-Source Voltage GS dv/dt Peak Diode Recovery dv/ Junction and Storage Temperature Range J, STG Thermal Resistance Ratings Parameter R Maximum Junction-to-Ambient DS(on) Parameter @ -10V GS @- 10V 91413E IRLMS5703 ® HEXFET Power MOSFET DSS DS(on iew M icro 6 Max. -2.3 -1.9 -13 1 ...

Page 2

... IRLMS5703 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... te-to-S o urce V oltage ( Fig 3. Typical Transfer Characteristics -3 . IRLMS5703 VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTT µ LSE W IDTH 0° ...

Page 4

... IRLMS5703 1MH rss Drain-to-Source V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig 10a. Switching Time Test Circuit Fig 10b. Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec) 1 IRLMS5703 D.U. -10V Pulse Width µs Duty Factor t t d(on ...

Page 6

... IRLMS5703 D.U Reverse Polarity of D.U.T for P-Channel Reverse Recovery Current Re-Applied Voltage *** Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations - ** dv/dt controlled controlled by Duty Factor "D" SD D.U.T. - Device Under Test Driver Gate Drive Period P.W. D.U.T. I Waveform SD Body Diode Forward Current di/dt D.U.T. V Waveform DS Diode Recovery ...

Page 7

Dimensions are shown in millimeters (inches) 3.00 (.118 ) -B- 2.80 (.111 ) 1.75 (.068 ) 3.00 (.118 ) 1.50 (.060 ) 2.60 (.103 ) - 0.95 ( .0375 ) 6X 2X 0.15 ...

Page 8

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Page 9

Dimensions are shown in millimeters (inches) NOTES : 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 178.00 ( 7.008 ) MAX. NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. FEED DIRECTION 4mm 8mm 9.90 ( ...

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