SUD30N03-30 Vishay Siliconix, SUD30N03-30 Datasheet - Page 4

• Manufacturer Part Number: SUD30N03-30
• Description: N-Channel MOSFET
• Manufacturer: Vishay Siliconix

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2-4
SUD30N03-30
Vishay Siliconix
0.01
0.1
1.8
1.6
1.4
1.2
1.0
0.8
0.6
35
28
21
14
2
1
7
0
–50
0
Maximum Drain Current vs. CaseTemperature
10
–4
On-Resistance vs. Junction Temperature
Duty Cycle = 0.5
0.2
0.1
V
I
–25
D
GS
= 15 A
25
= 10 V
Single Pulse
T
0
J
T
50
C
– Junction Temperature ( C)
0.05
– Case Temperature ( C)
25
75
50
0.02
75
100
10
–3
Normalized Thermal Transient Impedance, Junction-to-Case
100
125
125
150
150
Square Wave Pulse Duration (sec)
175
175
10
–2
200
100
0.1
100
10
10
1
1
0.1
0
Limited
by r
Source-Drain Diode Forward Voltage
DS(on)
0.3
V
V
SD
DS
10
T
Single Pulse
T
– Source-to-Drain Voltage (V)
C
Safe Operating Area
– Drain-to-Source Voltage (V)
–1
J
= 25 C
= 175 C
1
0.6
0.9
10
T
J
S-57253—Rev. D, 24-Feb-98
= 25 C
Document Number: 70268
1.2
1
1 ms
10 ms
100 ms
dc
100
1.5
3